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IKQ75N120CS6XKSA1

Name: Infineon IKQ75N120CS6XKSA1
Brand: Infineon Technologies
SKU: 726-IKQ75N120CS6XKSA
Price: 7.05 EUR
Availability: OutOfStock

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Mouser No:

726-IKQ75N120CS6XKSA

Mfr. No:

IKQ75N120CS6XKSA1

Mfr.:

Infineon Technologies

Description:

IGBTs INDUSTRY

Datasheet:

IKQ75N120CS6XKSA1 Datasheet (PDF)

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On Order:: 240
Factory Lead Time:: 19

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,05 €	7,05 €
	4,17 €	41,70 €
	3,75 €	375,00 €
	3,41 €	1.636,80 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3-46
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	150 A
Pd - Power Dissipation:	880 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	Trenchstop IGBT6
Packaging:	Tube
Brand:	Infineon Technologies
Continuous Collector Current Ic Max:	150 A
Gate-Emitter Leakage Current:	600 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	240
Subcategory:	IGBTs
Tradename:	TRENCHSTOP
Part # Aliases:	IKQ75N120CS6 SP001666624
Unit Weight:	6,897 g

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Datasheet

IKQ75N120CS6XKSA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

1200V TRENCHSTOP™ IGBT6

Infineon Technologies 1200V TRENCHSTOP™ IGBT6 are designed to meet requirements of high efficiency, lower conduction losses, and switching losses. These TRENCHSTOP IGBT6 feature low gate charge, low Electromagnetic Interference (EMI), easy paralleling capability, high efficiency in hard switching, and resonant topologies. The TRENCHSTOP IGBT6 is released in 2 product families, low conduction losses optimized S6 series and improved switching losses H6 series. These IGBT6 are plug-and-play replacements of predecessor HighSpeed3 H3 IGBT. The TRENCHSTOP IGBT6 implement the trench and fieldstop technology copacked with soft and fast recovery anti-parallel diode. These 1200V TRENCHSTOP IGBT6 achieve easy paralleling capability due to positive temperature coefficient in V_CEsat. Typical applications include industrial UPS, energy storage, three-level solar string inverter, and welding.