IGW15N120H3

Infineon Technologies
726-IGW15N120H3
IGW15N120H3

Mfr.:

Description:
IGBTs IGBT PRODUCTS

Datasheet:
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Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
2.05 V
- 20 V, 20 V
30 A
217 W
- 40 C
+ 175 C
HighSpeed 3
Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 600 nA
Product Type: IGBTs
Factory Pack Quantity: 240
Subcategory: Transistors
Tradename: TRENCHSTOP
Part # Aliases: SP000674430 IGW15N12H3XK IGW15N120H3FKSA1
Unit Weight: 38 g
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Austria
Assembly Country of Origin:
China
Country of Diffusion:
Austria
The country is subject to change at the time of shipment.

High Speed Trench & Fieldstop IGBTs

Infineon High Speed Trench & Fieldstop IGBTs use TrenchStop™ and Fieldstop technology to provide superb switching performance, very low VCEsat, and low EMI. Infineon High Speed Trench & Fieldstop IGBTs are ideal for uninterruptible power supplies applications. The IGW25N120H3 IGBT is recommended in combination with SiC Diode IDH15S120 and is also used for solar inverter applications. The IKW15N120H3, IKW30N60H3, and IKW20N60H3 IGBTs are each part of a high speed DuoPack and come with a very soft, fast recovery anti-parallel diode.

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
720
Expected 4/8/2027
Factory Lead Time:
36
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,66 € 3,66 €
2,01 € 20,10 €
1,58 € 158,00 €
1,34 € 643,20 €

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