GCMX010A120B3H1P

Name: SemiQ GCMX010A120B3H1P
Brand: SemiQ
SKU: 148-GCMX010A120B3H1P
Price: 152.31 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

148-GCMX010A120B3H1P

Mfr. No:

GCMX010A120B3H1P

Mfr.:

SemiQ

Description:

MOSFET Modules 1200V, 10mohm SiC MOSFET Full Bridge Module

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

GCMX010A120B3H1P Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about SemiQ GCMX010A120B3H1P

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Press Fit
Package/Case:	B3
Transistor Polarity:	N-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	201 A
Rds On - Drain-Source Resistance:	8.9 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	600 W
Series:	GCMX
Packaging:	Bulk
Brand:	SemiQ
Fall Time:	15 ns
Height:	15.2 mm
Length:	62.8 mm
Product:	Modules
Product Type:	MOSFET Modules
Rise Time:	9 ns
Factory Pack Quantity:	20
Subcategory:	Discrete and Power Modules
Type:	Full Bridge Module
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	32 ns
Vf - Forward Voltage:	3.9 V
Width:	56.7 mm

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GCMX010A120B3H1P Datasheet (PDF)

Compliance Codes

USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GCMX 1200V SiC MOSFET Full-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.