GCMX010A120B2B1P

Name: SemiQ GCMX010A120B2B1P
Brand: SemiQ
SKU: 148-GCMX010A120B2B1P
Price: 81.6 EUR
Availability: OutOfStock

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Mouser No:

148-GCMX010A120B2B1P

Mfr. No:

GCMX010A120B2B1P

Mfr.:

SemiQ

Description:

MOSFET Modules SiC 1200V 10mohm MOSFET Half-Bridge Module

Datasheet:

GCMX010A120B2B1P Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	MOSFET Modules
RoHS:
Technology:	SiC
Mounting Style:	Screw Mount
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	214 A
Rds On - Drain-Source Resistance:	9 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	GCMX
Packaging:	Reel
Packaging:	Cut Tape
Brand:	SemiQ
Fall Time:	22 ns
Product Type:	MOSFET Modules
Rise Time:	13 ns
Factory Pack Quantity:	40
Subcategory:	Discrete and Power Modules
Type:	Half-Bridge
Typical Turn-Off Delay Time:	75 ns
Typical Turn-On Delay Time:	40 ns

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Datasheet

GCMX010A120B2B1P Datasheet (PDF)

Compliance Codes

USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GCMX 1200V SiC MOSFET Half-Bridge Modules

SemiQ GCMX 1200V SiC MOSFET Half-Bridge Modules offer low switching losses, low junction-to-case thermal resistance and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The standout feature of these modules is the robust 1200V drain-source voltage. The GCMX half-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems and high-voltage DC-to-DC converters.