DMWSH120H28SM4Q

Diodes Incorporated
621-DMWSH120H28SM4Q
DMWSH120H28SM4Q

Mfr.:

Description:
SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS

ECAD Model:
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In Stock: 20

Stock:
20 Can Dispatch Immediately
Factory Lead Time:
40 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
28,37 € 28,37 €
21,74 € 217,40 €

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
Through Hole
TO-247-4
N-Channel
1 Channel
1.2 kV
100 A
28.5 mOhms
- 8 V, + 19 V
2.5 V
173.7 nC
- 55 C
+ 175 C
429 W
Enhancement
Brand: Diodes Incorporated
Configuration: Single
Fall Time: 12.52 ns
Forward Transconductance - Min: 15 S
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 40.06 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 23.83 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

DMWSH120Hx 1200V N-Channel Power MOSFETs

Diodes Incorporated DMWSH120Hx 1200V N-Channel Power MOSFETs are silicon carbide MOSFETs designed to minimize the on-state resistance and maintain excellent switching performance. These MOSFETs feature low input capacitance, up to 100μA zero gate voltage drain current, up to ±250nA gate-source leakage, and a high BVDSS rating for power applications. The DMWSH120Hx MOSFETs operate within the -55°C to 175°C temperature range and comply with the UL 94V-0 flammability classification rating. These power MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters, AC-DC traction inverters, and automotive motor drivers.