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DMN3730UFB4-7

Name: Diodes Incorporated DMN3730UFB4-7
Brand: Diodes Incorporated
SKU: 621-DMN3730UFB4-7
Price: 0.67 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

621-DMN3730UFB4-7

Mfr. No:

DMN3730UFB4-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs 30V N-Ch VDSS 30V VGSS 8V VGS 4.5V

Datasheet:

DMN3730UFB4-7 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diodes Incorporated DMN3730UFB4-7

Availability

Stock:: 0

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On Order:: 6.000

Expected 2/26/2027
Factory Lead Time:: 40

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,679 €	0,68 €
	0,621 €	6,21 €
	0,409 €	40,90 €
	0,282 €	141,00 €
	0,244 €	244,00 €
Full Reel (Order in multiples of 3000)
	0,206 €	618,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	X2-DFN1006-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	730 mA
Rds On - Drain-Source Resistance:	460 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	450 mV
Qg - Gate Charge:	1.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	690 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Single
Forward Transconductance - Min:	40 mS
Product Type:	MOSFETs
Series:	DMN37
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	1 mg

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Datasheet

DMN3730UFB4-7 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

Compliance Codes

TARIC:: 8532240000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412101
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

DMN3730UFB/4 30V N-Ch MOSFETs

Diodes Incorporated DMN3730UFB/4 30V N-Channel MOSFETs are designed to minimize on-state resistance (R_DS(ON)) and conduction loss, and yet maintain superior switching performance. Diodes Inc DMN3730UFB/4 MOSFETs are ideal for high efficiency power management applications such as load switches, portable applications, and power management functions.

Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.