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DMG1016V-7

Name: Diodes Incorporated DMG1016V-7
Brand: Diodes Incorporated
SKU: 621-DMG1016V-7
Price: 0.41 EUR
Availability: InStock

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Mouser No:

621-DMG1016V-7

Mfr. No:

DMG1016V-7

Mfr.:

Diodes Incorporated

Description:

MOSFETs MOSFET N-CHANNEL P-CHANNEL SOT-563

Datasheet:

DMG1016V-7 Datasheet (PDF)

ECAD Model:

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Learn more about Diodes Incorporated DMG1016V-7

In Stock: 271.127

Stock:: 271.127 Can Dispatch Immediately

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Factory Lead Time:: 24 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,413 €	0,41 €
	0,255 €	2,55 €
	0,162 €	16,20 €
	0,121 €	60,50 €
	0,108 €	108,00 €
Full Reel (Order in multiples of 3000)
	0,08 €	240,00 €
	0,073 €	438,00 €
	0,067 €	603,00 €
	0,065 €	1.560,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-563-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	870 mA, 640 mA
Rds On - Drain-Source Resistance:	400 mOhms, 700 mOhms
Vgs - Gate-Source Voltage:	- 6 V, 6 V
Vgs th - Gate-Source Threshold Voltage:	500 mV
Qg - Gate Charge:	736.6 pC, 622.4 pC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	530 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Diodes Incorporated
Configuration:	Dual
Fall Time:	12.3 ns, 20.7 ns
Product Type:	MOSFETs
Rise Time:	7.4 ns, 8.1 ns
Series:	DMG1016
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	26.7 ns, 28.4 ns
Typical Turn-On Delay Time:	5.1 ns, 5.1 ns
Unit Weight:	6 mg

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Datasheet

DMG1016V-7 Datasheet (PDF)

PCN

Environmental Compliance (PDF)

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
MXHTS:: 8541210100
ECCN:: EAR99

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Diodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.

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