CG2H40025F

MACOM
941-CG2H40025F
CG2H40025F

Mfr.:

Description:
GaN FETs GaN HEMT DC-6.0GHz, 25 Watt

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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
815
Expected 3/30/2026
Factory Lead Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
170,13 € 170,13 €
133,43 € 1.334,30 €

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
RoHS:  
Screw Mount
440166
N-Channel
120 V
3 A
- 3.8 V
- 40 C
+ 150 C
Brand: MACOM
Gain: 15 dB
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 0 Hz
Output Power: 25 W
Packaging: Tray
Product Type: GaN FETs
Factory Pack Quantity: 80
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V, 2 V
Unit Weight: 10,566 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.