CDF56G6517N TR13 PBFREE

Central Semiconductor
610-CDF56G6517NTR13P
CDF56G6517N TR13 PBFREE

Mfr.:

Description:
GaN FETs 650V, 17A, N-Channel GaN FET

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In Stock: 2.438

Stock:
2.438 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,87 € 4,87 €
3,75 € 37,50 €
2,73 € 273,00 €
2,65 € 2.650,00 €
Full Reel (Order in multiples of 2500)
2,31 € 5.775,00 €

Product Attribute Attribute Value Select Attribute
Central Semiconductor
Product Category: GaN FETs
RoHS:  
SMD/SMT
DFN-8
N-Channel
1 Channel
650 V
17 A
140 mOhms
- 1.4 V, + 7 V
2.5 V
3.5 nC
- 55 C
+ 150 C
113 W
Depletion
Brand: Central Semiconductor
Configuration: Single
Fall Time: 4 ns
Maximum Operating Frequency: 100 kHz
Minimum Operating Frequency: 0 Hz
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Rise Time: 5 ns
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Typical Turn-Off Delay Time: 4 ns
Typical Turn-On Delay Time: 3 ns
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

GaN N-Channel FETs

Central Semiconductor GaN N-Channel FETs excel in high voltage and low RDS(ON), making them ideal for efficient soft-switching applications. Central Semiconductor GaN FETs come in 100V (60A), 150V (60A), 650V (11A), 650V (17A), and 700V (18A) versions. The devices are available in practical surface-mount, chip-scale packages, and bare dies. Ideally, these FETs are used in switch-mode power supplies, high-power chargers, and Electric Vehicle (EV) inverters.