It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

BUK7Y3R1-80MX

Name: Nexperia BUK7Y3R1-80MX
Brand: Nexperia
SKU: 771-BUK7Y3R1-80MX
Price: 2.3 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

771-BUK7Y3R1-80MX

Mfr. No:

BUK7Y3R1-80MX

Mfr.:

Nexperia

Description:

MOSFETs BUK7Y3R1-80M/SOT669/LFPAK

Datasheet:

BUK7Y3R1-80MX Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Nexperia BUK7Y3R1-80MX

In Stock: 1.553

Stock:: 1.553 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,30 €	2,30 €
	1,49 €	14,90 €
	1,02 €	102,00 €
	0,894 €	447,00 €
	0,768 €	768,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	Power-SO8-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	160 A
Rds On - Drain-Source Resistance:	3.1 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	254 W
Channel Mode:	Enhancement
Brand:	Nexperia
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	22 ns
Product Type:	MOSFETs
Rise Time:	19 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	Trench 14 Low Ohmic Split-Gate MOSFET
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	20 ns
Part # Aliases:	934667067115

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

BUK7Y3R1-80MX Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

BUK7Y1R0-40N & BUK7Y3R1-80M N-Channel MOSFETs

Nexperia BUK7Y1R0-40N and BUK7Y3R1-80M N-Channel MOSFETs are designed and qualified to meet AEC-Q101 requirements, delivering high performance and endurance. These MOSFETs offer fast and efficient switching with optimal damping and low spiking. The BUK7Y1R0-40N and BUK7Y3R1-80M N-channel MOSFETs are encapsulated within LFPAK56 packages. The BUK7Y1R0-40N N-channel MOSFET utilizes the Trench 15 low-ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, while the BUK7Y3R1-80M employs the Trench 14 low-ohmic split-gate technology. These N-channel MOSFETs are EU RoHS-compliant and feature a 175°C maximum junction temperature range. Typical applications include motors, lighting, and solenoid control, 12V automotive systems, and ultra-high-performance power switching.