It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

BUK7Y1R0-40NX

Name: Nexperia BUK7Y1R0-40NX
Brand: Nexperia
SKU: 771-BUK7Y1R0-40NX
Price: 2.39 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

771-BUK7Y1R0-40NX

Mfr. No:

BUK7Y1R0-40NX

Mfr.:

Nexperia

Description:

MOSFETs BUK7Y1R0-40N/SOT669/LFPAK

Datasheet:

BUK7Y1R0-40NX Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Nexperia BUK7Y1R0-40NX

In Stock: 970

Stock:: 970 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,39 €	2,39 €
	1,53 €	15,30 €
	1,04 €	104,00 €
	0,869 €	434,50 €
	0,805 €	805,00 €
	0,777 €	1.165,50 €
	0,751 €	3.379,50 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	Power-SO8-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	320 A
Rds On - Drain-Source Resistance:	970 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	268 W
Channel Mode:	Enhancement
Brand:	Nexperia
Configuration:	Single
Fall Time:	58 ns
Product Type:	MOSFETs
Rise Time:	49 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	Enhanced-Trench Bottom Oxide (e-TBO) MOSFET
Typical Turn-Off Delay Time:	79 ns
Typical Turn-On Delay Time:	25 ns
Part # Aliases:	934666555115

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

BUK7Y1R0-40NX Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

BUK7Y1R0-40N & BUK7Y3R1-80M N-Channel MOSFETs

Nexperia BUK7Y1R0-40N and BUK7Y3R1-80M N-Channel MOSFETs are designed and qualified to meet AEC-Q101 requirements, delivering high performance and endurance. These MOSFETs offer fast and efficient switching with optimal damping and low spiking. The BUK7Y1R0-40N and BUK7Y3R1-80M N-channel MOSFETs are encapsulated within LFPAK56 packages. The BUK7Y1R0-40N N-channel MOSFET utilizes the Trench 15 low-ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, while the BUK7Y3R1-80M employs the Trench 14 low-ohmic split-gate technology. These N-channel MOSFETs are EU RoHS-compliant and feature a 175°C maximum junction temperature range. Typical applications include motors, lighting, and solenoid control, 12V automotive systems, and ultra-high-performance power switching.