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BST70B2P4K01-VC

Name: ROHM Semiconductor BST70B2P4K01-VC
Brand: ROHM Semiconductor
SKU: 755-BST70B2P4K01-VC
Price: 97.32 EUR
Availability: InStock

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Mouser No:

755-BST70B2P4K01-VC

Mfr. No:

BST70B2P4K01-VC

Mfr.:

ROHM Semiconductor

Description:

MOSFET Modules 1200V, 70A, Full-bridge, Automotive / Industrial Grade SiC Power Module

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

BST70B2P4K01-VC Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor BST70B2P4K01-VC

In Stock: 60

Stock:: 60 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	97,32 €	97,32 €
	80,95 €	809,50 €
	73,72 €	8.846,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET Modules
Technology:	SiC
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	70 A
Rds On - Drain-Source Resistance:	25 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	385 W
Packaging:	Bulk
Brand:	ROHM Semiconductor
Configuration:	Quad
Fall Time:	15 ns
Product:	Power Module
Product Type:	MOSFET Modules
Rise Time:	36 ns
Factory Pack Quantity:	60
Subcategory:	Discrete and Power Modules
Tradename:	EcoSiC
Typical Turn-Off Delay Time:	153 ns
Typical Turn-On Delay Time:	36 ns

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Datasheet

BST70B2P4K01-VC Datasheet

Specification Sheets

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Compliance Codes

USHTS:: 8541590080
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

High-Density SiC Power Modules

ROHM Semiconductor High-Density Silicon Carbide (SiC) Power Modules are designed to support high-efficiency power conversion in automotive and industrial applications. The lineup includes several package platforms such as TRCDRIVE pack™, HSDIP20, and DOT-247, each optimized for different power classes and system requirements. These packages integrate SiC MOSFETs into compact module structures that enable high power density, stable switching performance, and efficient thermal management. Depending on the package, configurations such as 2-in-1, 4-in-1, and 6-in-1 are available, providing flexibility for a wide range of power conversion and motor drive applications.