BSC155N06NDATMA1

Infineon Technologies
726-BSC155N06NDATMA1
BSC155N06NDATMA1

Mfr.:

Description:
MOSFETs IFX FET 60V

ECAD Model:
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In Stock: 4.137

Stock:
4.137 Can Dispatch Immediately
Factory Lead Time:
9 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 5000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,66 € 1,66 €
0,937 € 9,37 €
0,695 € 69,50 €
0,569 € 284,50 €
0,52 € 520,00 €
0,495 € 1.237,50 €
Full Reel (Order in multiples of 5000)
0,495 € 2.475,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
TDSON-8
N-Channel
2 Channel
60 V
20 A
15.5 mOhms
- 20 V, 20 V
2 V
29 nC
- 55 C
+ 175 C
50 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Configuration: Dual
Fall Time: 9 ns
Product Type: MOSFETs
Rise Time: 2 ns
Series: BSC155N06
Factory Pack Quantity: 5000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 11 ns
Part # Aliases: BSC155N06ND SP003883348
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

OptiMOS™ Dual-Channel Super Cool Power MOSFETs

Infineon Technologies OptiMOS™ Dual-Channel Super Cool Power MOSFETs are N-channel power transistors in a SuperSO8 package with dual-cool capability for enhanced thermal performance. The Infineon OptiMOS Power MOSFETs are developed to increase efficiency, power density, and cost-effectiveness. These devices feature low on-state resistance (RDS(on)) and low reverse recovery charge (Qrr), increasing power density while improving robustness and system reliability. The +175°C rating facilitates designs with either more power at a higher operating junction temperature or a longer lifetime at the same operating junction temperature.