G3F60MT06J-TR

GeneSiC Semiconductor
905-G3F60MT06J-TR
G3F60MT06J-TR

Mfr.:

Description:
SiC MOSFETs 650V 55mohm TO-263-7 G3F SiC MOSFET

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 755

Stock:
755 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,08 € 5,08 €
4,62 € 46,20 €
4,45 € 111,25 €
4,20 € 420,00 €
4,04 € 1.010,00 €
3,92 € 1.960,00 €
Full Reel (Order in multiples of 800)
3,81 € 3.048,00 €
3,78 € 9.072,00 €

Product Attribute Attribute Value Select Attribute
Navitas Semiconductor
Product Category: SiC MOSFETs
RoHS:  
Brand: GeneSiC Semiconductor
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Packaging: Reel
Packaging: Cut Tape
Product Type: SiC MOSFETS
Series: G3F
Factory Pack Quantity: 800
Subcategory: Transistors
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor Gen-3 Fast (G3F) SiC MOSFETs are developed using a proprietary trench-assisted planar technology for high-speed performance. The technology enables an extremely low RDS(ON) increase vs. temperature, which results in low power losses across the full operating range. Available in 650V and 1200V variants, these MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density. GeneSiC G3F SiC MOSFETs offer high-speed, cool-running performance, with up to a +25°C lower case temperature. The thermally enhanced TOLL package for the 650V variant provides space and thermal management advantages. The 1200V models offer the power needed for next-generation EVs and industrial applications. Typical applications include AI data centers, EV roadside superchargers, onboard chargers (OBC), energy storage systems (ESS), and solar power solutions.

650V Gen-3 Fast (G3F) SiC MOSFETs

GeneSiC Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETs are optimized for faster switching speeds, higher efficiency, and increased power density, demanded by various applications. These MOSFETs are developed using a proprietary ‘trench-assisted planar’ technology, delivering high-speed performance. The 650V SiC MOSFETs offer the best-in-class 20mΩ to 55mΩ low on-resistance range. These MOSFETs feature a peak efficiency above 97% at 137W/inch³ power density. The 650V SiC MOSFETs come in a thermally enhanced, rugged, high-speed, surface-mount TOLL package. Typical applications include AI data center power supplies, EV charging, energy storage systems, and solar solutions.