UJ4SC075011K4S

onsemi
431-UJ4SC075011K4S
UJ4SC075011K4S

Mfr.:

Description:
SiC MOSFETs 750V/11MOSICFETG4TO247-4

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In Stock: 55

Stock:
55
Can Dispatch Immediately
On Order:
600
Expected 3/4/2027
Factory Lead Time:
31
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
16,58 € 16,58 €
10,97 € 109,70 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4
N-Channel
1 Channel
750 V
104 A
11 mOhms
- 20 V, + 20 V
5.5 V
75 nC
- 55 C
+ 175 C
357 W
Enhancement
SiC FET
Brand: onsemi
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: US
Country of Origin: PH
Fall Time: 9 ns
Packaging: Tube
Product Type: SiC MOSFETS
Rise Time: 26 ns
Series: UJ4SC
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 65 ns
Typical Turn-On Delay Time: 19 ns
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UJ4C/SC 750V Gen 4 SiC FETs

onsemi UJ4C/SC 750V Gen 4 SiC FETs are a high-performance series delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can significantly enhance system performance without changing gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the onsemi UJ4C/SC FETs.