UJ3D1220KSD

onsemi
431-UJ3D1220KSD
UJ3D1220KSD

Mfr.:

Description:
SiC Schottky Diodes 1200V/20ASICDIODEDUAL

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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In Stock: 346

Stock:
346 Can Dispatch Immediately
Factory Lead Time:
31 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
12,50 € 12,50 €
7,67 € 76,70 €
7,40 € 740,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247-3
Dual
20 A
1.2 kV
1.4 V
240 A
200 uA
- 55 C
+ 175 C
UJ3D
AEC-Q101
Tube
Brand: onsemi
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Pd - Power Dissipation: 468.8 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 600
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 1.2 kV
Unit Weight: 14,782 g
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USHTS:
8541100080
ECCN:
EAR99

UJ3D 650V/1200V/1700V SiC Schottky Diodes

onsemi UJ3D 650V/1200V/1700V SiC Schottky Diodes are designed to take advantage of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF). With zero reverse recovery charge and a high maximum junction temperature of +175°C, these devices are ideally suited for high-frequency and high-efficiency power systems with minimum cooling requirements. These devices from onsemi feature an optimized forward voltage drop, enhanced surge capability, and ultra-low reverse recovery Qc(Qrr) and are ideally suited for telecom power, server PSUs, battery chargers, and any application that requires high switching speeds and reduced losses. All devices are qualified according to AEC-Q101 standards and manufactured in a TS 16949-certified supply chain, making them ideal for automotive applications.