UHB100SC12E1BC3N

onsemi
772-UHB100SC12E1BC3N
UHB100SC12E1BC3N

Mfr.:

Description:
Discrete Semiconductor Modules 1200V/100ASICHALF-BRIDG

Lifecycle:
NRND:
Not recommended for new designs.
Datasheet:
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More Information
Learn more about onsemi UHB100SC12E1BC3N

In Stock: 97

Stock:
97 Can Dispatch Immediately
Factory Lead Time:
34 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
166,37 € 166,37 €
163,62 € 1.636,20 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Discrete Semiconductor Modules
RoHS:  
SiC Modules
Half Bridge
SiC
1.4 V
- 20 V, + 20 V
Screw Mount
E1B
- 55 C
+ 150 C
UHBxxxSC
Tray
Brand: onsemi
Configuration: Dual
Fall Time: 16 ns
Id - Continuous Drain Current: 100 A
Pd - Power Dissipation: 417 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 12 mOhms
Rise Time: 18.4 ns
Factory Pack Quantity: 24
Subcategory: Discrete Semiconductor Modules
Tradename: SiC FET Module
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 57.6 ns
Typical Turn-On Delay Time: 27.2 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
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Attributes selected: 0

Datasheet

PCN

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Compliance Codes
TARIC:
8541290000
CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

SiC E1B Modules

onsemi SiC E1B Modules feature a unique cascode circuit with a normally on SiC JFET co-packaged with a Si MOSFET, resulting in a normally off SiC FET. The SiC E1B series offers a silicon-like gate drive that supports unipolar gate drives compatible with Si IGBTs, Si FETs, SiC MOSFETs, and Si super junction devices. Housed in the E1B module package, these onsemi devices boast ultra-low gate charge and excellent switching characteristics, making them ideal for hard-switching and ZVS soft-switching applications. The modules incorporate advanced Ag sintering die attach technology for superior power cycling and thermal performance.

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