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UF4C120053B7SSR

Name: onsemi UF4C120053B7SSR
Brand: onsemi
SKU: 772-UF4C120053B7SSR
Price: 13.36 EUR
Availability: InStock

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Mouser No:

772-UF4C120053B7SSR

Mfr. No:

UF4C120053B7SSR

Mfr.:

onsemi

Description:

SiC MOSFETs UF4C120053B7S

Lifecycle:

Factory Special Order:

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Datasheet:

UF4C120053B7SSR Datasheet

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In Stock: 200

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	13,36 €	13,36 €
	10,34 €	103,40 €
	8,94 €	894,00 €
2.600	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	34 A
Rds On - Drain-Source Resistance:	53 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	37.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	SiC FET
Brand:	onsemi
Configuration:	Single
Fall Time:	12 ns
Product:	SiC FET
Product Type:	SiC MOSFETS
Rise Time:	32 ns
Series:	UF4C
Factory Pack Quantity:	200
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	57 ns
Typical Turn-On Delay Time:	20 ns

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Datasheet

UF4C120053B7SSR Datasheet

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

UF4C/SC 1200V Gen 4 SiC FETs

Qorvo UF4C/SC 1200V Gen 4 SiC FETs are a high-performance series delivering industry-best Figures of Merit. The UF4C/SC 1200V Gen 4 SiC FETs are ideal for mainstream 800V bus architectures in onboard chargers for EVs, industrial battery chargers, industrial power supplies, renewables, energy storage, welding machines, UPS and induction heating applications. Available in 23mΩ to 70mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode optimised Si-MOSFET to produce a standard gate drive SiC device. This feature allows for flexible design without changing gate drive voltage, easily replacing Si IGBTs, Si FETs, SiC FETs or Si super-junction devices.