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NVMFWS2D5N08XT1G

Name: onsemi NVMFWS2D5N08XT1G
Brand: onsemi
SKU: 863-NVMFWS2D5N08XT1G
Price: 2.94 EUR
Availability: InStock

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Mouser No:

863-NVMFWS2D5N08XT1G

Mfr. No:

NVMFWS2D5N08XT1G

Mfr.:

onsemi

Description:

MOSFETs T10 80V STD NCH MOSFET SO8FL PREMIER WF

Datasheet:

NVMFWS2D5N08XT1G Datasheet

ECAD Model:

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In Stock: 23.237

Stock:: 23.237 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,94 €	2,94 €
	1,91 €	19,10 €
	1,40 €	140,00 €
	1,17 €	585,00 €
	1,08 €	1.080,00 €
Full Reel (Order in multiples of 1500)
	1,01 €	1.515,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFNW5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	156 A
Rds On - Drain-Source Resistance:	2.55 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	45 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	133 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	JP
Country of Origin:	MY
Fall Time:	6 ns
Forward Transconductance - Min:	115 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	NVMFS2D5N08X
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	24 ns

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Datasheet

NVMFWS2D5N08XT1G Datasheet

PCN

Product Change Notification 2024-07-03 (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low R_DS(ON), low Q_G, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.