It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

NVMFWS020N06CT1G

Name: onsemi NVMFWS020N06CT1G
Brand: onsemi
SKU: 863-NVMFWS020N06CT1G
Price: 1.79 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NVMFWS020N06CT1G

Mfr. No:

NVMFWS020N06CT1G

Mfr.:

onsemi

Description:

MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO

Datasheet:

NVMFWS020N06CT1G Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVMFWS020N06CT1G

In Stock: 1.500

Stock:: 1.500 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,79 €	1,79 €
	1,15 €	11,50 €
	0,776 €	77,60 €
	0,617 €	308,50 €
	0,547 €	547,00 €
Full Reel (Order in multiples of 1500)
	0,547 €	820,50 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	NVMFS020N06C
Factory Pack Quantity:	1500
Subcategory:	Transistors
Unit Weight:	187 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVMFWS020N06CT1G Datasheet

PCN

Product Change Notification 2024-07-03 (PDF)

Material Composition Disclosure

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.