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NVMFS6H848NLT1G

Name: onsemi NVMFS6H848NLT1G
Brand: onsemi
SKU: 863-NVMFS6H848NLT1G
Price: 1.43 EUR
Availability: InStock

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See Product Specifications

Mouser No:

863-NVMFS6H848NLT1G

Mfr. No:

NVMFS6H848NLT1G

Mfr.:

onsemi

Description:

MOSFETs T8 80V LL SO8FL

Datasheet:

NVMFS6H848NLT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMFS6H848NLT1G

In Stock: 594

Stock:: 594

Can Dispatch Immediately

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On Order:: 4.500

Expected 7/27/2026
Factory Lead Time:: 33

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 680

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,43 €	1,43 €
	0,903 €	9,03 €
	0,604 €	60,40 €
	0,476 €	238,00 €
Full Reel (Order in multiples of 1500)
	0,476 €	714,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	57 A
Rds On - Drain-Source Resistance:	9.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	16 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	73 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	23 ns
Forward Transconductance - Min:	52 S
Product Type:	MOSFETs
Rise Time:	33 ns
Series:	NVMFS6H848NL
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	175 mg

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Datasheet

NVMFS6H848NLT1G Datasheet

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).