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NVMFS6D1N08HT1G

Name: onsemi NVMFS6D1N08HT1G
Brand: onsemi
SKU: 863-NVMFS6D1N08HT1G
Price: 1.87 EUR
Availability: InStock

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Mouser No:

863-NVMFS6D1N08HT1G

Mfr. No:

NVMFS6D1N08HT1G

Mfr.:

onsemi

Description:

MOSFETs T8 80V 1 PART PROLI FERATI

Datasheet:

NVMFS6D1N08HT1G Datasheet

ECAD Model:

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In Stock: 240

Stock:: 240

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On Order:: 1.500

Expected 6/21/2027
Factory Lead Time:: 21

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,87 €	1,87 €
	1,20 €	12,00 €
	0,808 €	80,80 €
	0,642 €	321,00 €
	0,525 €	525,00 €
Full Reel (Order in multiples of 1500)
	0,487 €	730,50 €
	0,485 €	4.365,00 €
	0,481 €	11.544,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	89 A
Rds On - Drain-Source Resistance:	5.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	32 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	104 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	JP
Country of Origin:	MY
Fall Time:	39 ns
Forward Transconductance - Min:	80 S
Product Type:	MOSFETs
Rise Time:	50 ns
Series:	NVMFS6D1N08H
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	48 ns
Typical Turn-On Delay Time:	18 ns
Unit Weight:	750 mg

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Datasheet

NVMFS6D1N08HT1G Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).