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NVMFS5H663NLWFT1G

Name: onsemi NVMFS5H663NLWFT1G
Brand: onsemi
SKU: 863-NVMFS5H663NLWFTG
Price: 1.67 EUR
Availability: InStock

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Mouser No:

863-NVMFS5H663NLWFTG

Mfr. No:

NVMFS5H663NLWFT1G

Mfr.:

onsemi

Description:

MOSFETs T8 60V LOW COSS

Datasheet:

NVMFS5H663NLWFT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVMFS5H663NLWFT1G

In Stock: 1.500

Stock:: 1.500 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	1,67 €	1,67 €
	1,07 €	10,70 €
	0,718 €	71,80 €
	0,569 €	284,50 €
	0,498 €	498,00 €
Full Reel (Order in multiples of 1500)
	0,495 €	742,50 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	67 A
Rds On - Drain-Source Resistance:	7.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	63 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	9.5 ns
Forward Transconductance - Min:	64 S
Product Type:	MOSFETs
Rise Time:	52.7 ns
Series:	NVMFS5H663NL
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26.2 ns
Typical Turn-On Delay Time:	13.4 ns
Unit Weight:	175 mg

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Datasheet

NVMFS5H663NLWFT1G Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).