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NVMFS5C450NLAFT1G

Name: onsemi NVMFS5C450NLAFT1G
Brand: onsemi
SKU: 863-NVMFS5C450NLAF1
Price: 2.12 EUR
Availability: InStock

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Mouser No:

863-NVMFS5C450NLAF1

Mfr. No:

NVMFS5C450NLAFT1G

Mfr.:

onsemi

Description:

MOSFETs T6 40V NCH LL IN U8FL

Datasheet:

NVMFS5C450NLAFT1G Datasheet (PDF)

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In Stock: 6.638

Stock:: 6.638 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,12 €	2,12 €
	1,37 €	13,70 €
	0,937 €	93,70 €
	0,749 €	374,50 €
	0,702 €	702,00 €
Full Reel (Order in multiples of 1500)
	0,691 €	1.036,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	110 A
Rds On - Drain-Source Resistance:	2.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	35 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	68 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	110 ns
Series:	NVMFS5C450NL
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel Power MOSFET
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	750 mg

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Datasheet

NVMFS5C450NLAFT1G Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.