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NVMFS5C410NLWFHT1G

Name: onsemi NVMFS5C410NLWFHT1G
Brand: onsemi
SKU: 863-MFS5C410NLWFHT1G
Price: 2.53 EUR
Availability: InStock

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See Product Specifications

Mouser No:

863-MFS5C410NLWFHT1G

Mfr. No:

NVMFS5C410NLWFHT1G

Mfr.:

onsemi

Description:

MOSFETs T6 40V SO8FL

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVMFS5C410NLWFHT1G Datasheet (PDF)

ECAD Model:

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More Information

Learn more about onsemi NVMFS5C410NLWFHT1G

In Stock: 1.112

Stock:: 1.112 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,53 €	2,53 €
	1,64 €	16,40 €
	1,14 €	114,00 €
	0,946 €	473,00 €
	0,886 €	886,00 €
Full Reel (Order in multiples of 1500)
	0,886 €	1.329,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFNW-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	330 A
Rds On - Drain-Source Resistance:	820 uOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	143 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	167 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	177 ns
Product Type:	MOSFETs
Rise Time:	130 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	20 ns

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Datasheet

NVMFS5C410NLWFHT1G Datasheet (PDF)

TARIC:: 8541290000
USHTS:: 8541290095
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.