NVMFS5C410NLWFAFT1G

onsemi
863-NVMFS5C410NWAT1G
NVMFS5C410NLWFAFT1G

Mfr.:

Description:
MOSFETs T6 40V HEFET

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 736

Stock:
736 Can Dispatch Immediately
Factory Lead Time:
40 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1500)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
4,56 € 4,56 €
3,04 € 30,40 €
2,18 € 218,00 €
2,09 € 1.045,00 €
1,98 € 1.980,00 €
Full Reel (Order in multiples of 1500)
1,95 € 2.925,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
SO-8FL
N-Channel
1 Channel
40 V
330 A
650 uOhms
- 20 V, 20 V
2 V
143 nC
- 55 C
+ 175 C
167 W
Enhancement
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Single
Fall Time: 177 ns
Forward Transconductance - Min: 190 S
Product Type: MOSFETs
Rise Time: 130 ns
Series: NVMFS5C410NL
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 66 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 187 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Japan
The country is subject to change at the time of shipment.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.