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NVMFS5C406NT1G

Name: onsemi NVMFS5C406NT1G
Brand: onsemi
SKU: 863-NVMFS5C406NT1G
Price: 4.74 EUR
Availability: OutOfStock

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Mouser No:

863-NVMFS5C406NT1G

Mfr. No:

NVMFS5C406NT1G

Mfr.:

onsemi

Description:

MOSFETs T6 40V SG NCH SO8FL HEFET

Datasheet:

NVMFS5C406NT1G Datasheet

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 50 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,74 €	4,74 €
	3,24 €	32,40 €
	2,33 €	233,00 €
	2,27 €	1.135,00 €
Full Reel (Order in multiples of 1500)
	2,12 €	3.180,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	353 A
Rds On - Drain-Source Resistance:	800 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	110 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	179 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	52 ns
Forward Transconductance - Min:	190 S
Product Type:	MOSFETs
Rise Time:	116 ns
Series:	NVMFS5C406N
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	133 ns
Typical Turn-On Delay Time:	48 ns
Unit Weight:	750 mg

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Datasheet

NVMFS5C406NT1G Datasheet

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.