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NVMFS4C310NWFT1G

Name: onsemi NVMFS4C310NWFT1G
Brand: onsemi
SKU: 863-NVMFS4C310NWFT1G
Price: 1.81 EUR
Availability: OutOfStock

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Mouser No:

863-NVMFS4C310NWFT1G

Mfr. No:

NVMFS4C310NWFT1G

Mfr.:

onsemi

Description:

MOSFETs TRENCH 30V NCH

Datasheet:

NVMFS4C310NWFT1G Datasheet

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 35 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,81 €	1,81 €
	1,16 €	11,60 €
	0,783 €	78,30 €
	0,624 €	312,00 €
	0,602 €	602,00 €
Full Reel (Order in multiples of 1500)
	0,56 €	840,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	51 A
Rds On - Drain-Source Resistance:	5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	18.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	32 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	US
Country of Origin:	US
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	26 ns
Series:	NVMFS4C310N
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	Single N-Channel Power MOSFET
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	7 ns
Unit Weight:	187 mg

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Datasheet

NVMFS4C310NWFT1G Datasheet

PCN

TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8542390000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 8542399901
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.