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NVMFS4C302NWFT1G

Name: onsemi NVMFS4C302NWFT1G
Brand: onsemi
SKU: 863-NVMFS4C302NWFT1G
Price: 1.21 EUR
Availability: Discontinued

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See Product Specifications

Mouser No:

863-NVMFS4C302NWFT1G

Mfr. No:

NVMFS4C302NWFT1G

Mfr.:

onsemi

Description:

MOSFETs NFET SO8FL 30V 1.15MO

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

NVMFS4C302NWFT1G Datasheet

ECAD Model:

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More Information

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 18 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 1500 Multiples: 1500

Unit Price:

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Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1500)
	1,21 €	1.815,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	241 A
Rds On - Drain-Source Resistance:	1.15 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	82 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	115 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	9 ns
Forward Transconductance - Min:	135 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	NVMFS4C302N
Factory Pack Quantity:	1500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	54 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	187 mg

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Datasheet

NVMFS4C302NWFT1G Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
MXHTS:: 85412999
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.