NVMFD010N10MCLT1G

onsemi
863-VMFD010N10MCLT1G
NVMFD010N10MCLT1G

Mfr.:

Description:
MOSFETs PTNG 100V LL SO8FL DUAL

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 737

Stock:
737
Can Dispatch Immediately
On Order:
1.500
Expected 6/2/2026
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,78 € 2,78 €
1,81 € 18,10 €
1,25 € 125,00 €
1,01 € 505,00 €
0,912 € 912,00 €
Full Reel (Order in multiples of 1500)
0,912 € 1.368,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DFN-8
N-Channel
2 Channel
100 V
61 A
10.4 mOhms
20 V
3 V
26 nC
- 55 C
+ 175 C
84 W
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Dual
Fall Time: 5.5 ns
Product Type: MOSFETs
Rise Time: 4.2 ns
Series: NVMFD010N10MCL
Factory Pack Quantity: 1500
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 32 ns
Typical Turn-On Delay Time: 11 ns
Products found:
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
Malaysia
Assembly Country of Origin:
Malaysia
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

NVMFDx 100V Dual N-Channel Power MOSFETs

onsemi NVMFDx 100V Dual N-Channel Power MOSFETs are high-efficiency, compact solutions designed for demanding power switching applications. These MOSFETs feature low RDS(on) values and fast switching characteristics, making the onsemi NVMFDx ideal for use in DC-DC converters, motor drives, and battery management systems. Housed in a space-saving DFN-8 package, these MOSFETs support high current handling and thermal performance, which is critical for automotive, industrial, and consumer electronics. Each variant offers different current and resistance profiles to suit specific design needs, while maintaining robust avalanche energy ratings and low gate charge for improved efficiency and reliability in high-performance power systems.