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NVJS3151PT1G

Name: onsemi NVJS3151PT1G
Brand: onsemi
SKU: 863-NVJS3151PT1G
Price: 0.53 EUR
Availability: InStock

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See Product Specifications

Mouser No:

863-NVJS3151PT1G

Mfr. No:

NVJS3151PT1G

Mfr.:

onsemi

Description:

MOSFETs NFET SO8FL 12V 3.3A 60MOHM

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NVJS3151PT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVJS3151PT1G

In Stock: 2.700

Stock:: 2.700 Can Dispatch Immediately

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Factory Lead Time:: 43 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,533 €	0,53 €
	0,329 €	3,29 €
	0,21 €	21,00 €
	0,158 €	79,00 €
	0,142 €	142,00 €
Full Reel (Order in multiples of 3000)
	0,112 €	336,00 €
	0,102 €	612,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SC-88-6
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	12 V
Id - Continuous Drain Current:	2.7 A
Rds On - Drain-Source Resistance:	160 mOhms
Vgs - Gate-Source Voltage:	- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	8.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	625 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	TW
Country of Origin:	CN
Fall Time:	3.9 us
Forward Transconductance - Min:	15 S
Product Type:	MOSFETs
Rise Time:	1.5 us
Series:	NVJS3151P
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	3.5 us
Typical Turn-On Delay Time:	0.86 us

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Datasheet

NVJS3151PT1G Datasheet

EOL

Process Discontinuance Notification (PDF)

Material Composition Disclosure

TARIC:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
MXHTS:: 8541210100
ECCN:: EAR99

NxJS3151P Single P-Channel Power MOSFETs

onsemi NxJS3151P Single P-Channel Power MOSFETs are high-performance MOSFETs designed for efficient switching applications. Housed in a compact SC-88 (SOT-363) 2mm x 2mm package, these onsemi MOSFETs offer a low R_DS(on) of just 45mΩ at -4.5V, enabling reduced conduction losses and improved thermal performance. With a maximum drain current of -3.3A and a drain-source voltage rating of -12V, the NxJS3151P devices are well-suited for load switching in portable and battery-powered devices. The ultra-low gate charge and fast switching characteristics contribute to enhanced energy efficiency, making the onsemi NxJS3151P Single P-Channel Power MOSFETs ideal for space-constrained designs where power density and reliability are critical.