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NVHL075N065SC1

Name: onsemi NVHL075N065SC1
Brand: onsemi
SKU: 863-NVHL075N065SC1
Price: 12.62 EUR
Availability: InStock

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Mouser No:

863-NVHL075N065SC1

Mfr. No:

NVHL075N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-3L 650V 75MOHM

Datasheet:

NVHL075N065SC1 Datasheet

ECAD Model:

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More Information

Learn more about onsemi NVHL075N065SC1

In Stock: 366

Stock:: 366 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	12,62 €	12,62 €
	7,67 €	76,70 €
	7,00 €	840,00 €
	6,84 €	3.488,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	61 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	74 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Fall Time:	8 ns
Forward Transconductance - Min:	9 S
Packaging:	Tube
Product:	Mosfets
Product Type:	SiC MOSFETS
Rise Time:	26 ns
Series:	NVHL075N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	10 ns

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Datasheet

NVHL075N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs are high-performance devices with exceptional characteristics. The onsemi NVHL075N065SC1 offers a typical R_DS(on) of 57mΩ at a gate-source voltage (V_GS) of 18V and 75mΩ at 15V. The device features ultra-low gate charge (Q_G(tot) = 61nC) and low output capacitance (C_oss = 107pF), ensuring fast switching and reduced power losses.