It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

NTMYS008N08LHTWG

Name: onsemi NTMYS008N08LHTWG
Brand: onsemi
SKU: 863-NTMYS008N08LHTWG
Price: 2.6 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

863-NTMYS008N08LHTWG

Mfr. No:

NTMYS008N08LHTWG

Mfr.:

onsemi

Description:

MOSFETs T8 80V LL LFPAK

Datasheet:

NTMYS008N08LHTWG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NTMYS008N08LHTWG

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 3.000

Expected 6/26/2026
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,60 €	2,60 €
	2,55 €	25,50 €
Full Reel (Order in multiples of 3000)
	0,877 €	2.631,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	59 A
Rds On - Drain-Source Resistance:	11 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	73 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	SIngle
Fall Time:	8 ns
Forward Transconductance - Min:	84 S
Product Type:	MOSFETs
Rise Time:	87 ns
Series:	NTMYS008N08HL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	22 ns'
Typical Turn-On Delay Time:	37 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NTMYS008N08LHTWG Datasheet

PCN

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Philippines
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are designed for compact and efficient designs with a small footprint. These power MOSFETs feature low R_DS(ON), low Q_G, and capacitance, which minimize conduction and driver losses. These MOSFETs are available in 40V, 60V, and 80V drain-to-source voltages and a ±20V gate-to-source voltage. The onsemi Single N-Channel Power MOSFETs are Pb-free and RoHS compliant.