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NTMFS4C024NT1G

Name: onsemi NTMFS4C024NT1G
Brand: onsemi
SKU: 863-NTMFS4C024NT1G
Price: 0.73 EUR
Availability: InStock

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See Product Specifications

Mouser No:

863-NTMFS4C024NT1G

Mfr. No:

NTMFS4C024NT1G

Mfr.:

onsemi

Description:

MOSFETs TRENCH 6 30V NCH

Datasheet:

NTMFS4C024NT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTMFS4C024NT1G

In Stock: 133

Stock:: 133

Can Dispatch Immediately

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On Order:: 1.500

Expected 3/29/2027
Factory Lead Time:: 48

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,731 €	0,73 €
	0,456 €	4,56 €
	0,295 €	29,50 €
	0,225 €	112,50 €
	0,179 €	179,00 €
Full Reel (Order in multiples of 1500)
	0,163 €	244,50 €
	0,151 €	453,00 €
	0,144 €	1.296,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	78 A
Rds On - Drain-Source Resistance:	2.8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Qg - Gate Charge:	30 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	6.6 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Product Type:	MOSFETs
Series:	NTMFS4C024N
Factory Pack Quantity:	1500
Subcategory:	Transistors
Unit Weight:	750 mg

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Datasheet

NTMFS4C024NT1G Datasheet

PCN

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.