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NTMFS2D1N08XT1G

Name: onsemi NTMFS2D1N08XT1G
Brand: onsemi
SKU: 863-NTMFS2D1N08XT1G
Price: 2.94 EUR
Availability: InStock

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Mouser No:

863-NTMFS2D1N08XT1G

Mfr. No:

NTMFS2D1N08XT1G

Mfr.:

onsemi

Description:

MOSFETs T10 80V STD NCH MOSFET SO8FL

Datasheet:

NTMFS2D1N08XT1G Datasheet

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In Stock: 3.981

Stock:: 3.981

Can Dispatch Immediately

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On Order:: 7.500

Expected 6/1/2026

6.000

Expected 7/7/2026
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 2040

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,94 €	2,94 €
	1,92 €	19,20 €
	1,32 €	132,00 €
	1,12 €	560,00 €
	0,963 €	963,00 €
Full Reel (Order in multiples of 1500)
	0,963 €	1.444,50 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	201 A
Rds On - Drain-Source Resistance:	1.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	39 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	164 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	MY
Country of Diffusion:	JP
Country of Origin:	MY
Fall Time:	7 ns
Forward Transconductance - Min:	158 S
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	NTMFS2D1N08X
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	42 ns
Typical Turn-On Delay Time:	29 ns

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Datasheet

NTMFS2D1N08XT1G Datasheet

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

PowerTrench Technology

onsemi PowerTrench Technology represents the advancement of PowerTrench technology, especially from T6 to T10, which signifies a breakthrough in power electronics. Developed by onsemi, PowerTrench MOSFETs offer enhanced efficiency and performance across various applications. The shift from T6/T8 to T10 significantly improves on-resistance and switching performance, which is crucial for energy-efficient designs.

40V Power MOSFETs

onsemi 40V Power MOSFETs feature standard gate-level technology and boast best-in-class on-resistance. The onsemi MOSFETs are designed for motor driver applications. The devices effectively minimize conduction and driving losses with lower on-resistance and reduced gate charge. Additionally, the MOSFETs provide excellent softness control for body diode reverse recovery, effectively mitigating voltage spike stress without needing an extra snubber circuit in applications.