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NTMFS008N12MCT1G

Name: onsemi NTMFS008N12MCT1G
Brand: onsemi
SKU: 863-NTMFS008N12MCT1G
Price: 2.72 EUR
Availability: InStock

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Mouser No:

863-NTMFS008N12MCT1G

Mfr. No:

NTMFS008N12MCT1G

Mfr.:

onsemi

Description:

MOSFETs PTNG 120V SG

Datasheet:

NTMFS008N12MCT1G Datasheet

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In Stock: 1.184

Stock:: 1.184 Can Dispatch Immediately

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Factory Lead Time:: 48 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1184 will be subject to minimum order requirements.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,72 €	2,72 €
	1,59 €	15,90 €
	1,23 €	123,00 €
	1,08 €	540,00 €
	0,972 €	972,00 €
Full Reel (Order in multiples of 1500)
	0,972 €	1.458,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8FL-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	120 V
Id - Continuous Drain Current:	79 A
Rds On - Drain-Source Resistance:	8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	33 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	102 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTMFS008N12MC
Factory Pack Quantity:	1500
Subcategory:	Transistors

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Datasheet

NTMFS008N12MCT1G Datasheet

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

Single N-Channel Power MOSFETs

onsemi Single N-Channel Power MOSFETs are small-footprint and compact MOSFETs with low R_DS(on) and low capacitance. The low R_DS(on) value helps to minimize conduction losses, and low capacitance minimizes driver losses. These single N-channel power MOSFETs are Pb-free and RoHS compliant and feature a -55°C to +175°C operating temperature range.