NTJS3151PT2G

onsemi
863-NTJS3151PT2G
NTJS3151PT2G

Mfr.:

Description:
MOSFETs 12V 3.3A P-Channel

ECAD Model:
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In Stock: 2.874

Stock:
2.874 Can Dispatch Immediately
Factory Lead Time:
30 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,447 € 0,45 €
0,28 € 2,80 €
0,188 € 18,80 €
0,142 € 71,00 €
0,128 € 128,00 €
Full Reel (Order in multiples of 3000)
0,108 € 324,00 €

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
0,37 €
Min:
1

Possible Replacement

onsemi NTJS3151PT1G
onsemi
MOSFETs 12V 3.3A P-Channel

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SC-88-6
P-Channel
1 Channel
12 V
3.3 A
133 mOhms
- 12 V, 12 V
- 55 C
+ 150 C
625 mW
Enhancement
Reel
Cut Tape
Brand: onsemi
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 1.5 ns
Forward Transconductance - Min: 15 S
Product Type: MOSFETs
Rise Time: 1.5 ns
Series: NTJS3151P
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 3.5 ns
Typical Turn-On Delay Time: 0.86 ns
Products found:
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Attributes selected: 0

                        
This part is discontinued with no replacement. It will
no longer be available once stock is depleted.

Please contact a Mouser Technical Sales Representative for
further information.

5-9999-2

TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210095
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

NxJS3151P Single P-Channel Power MOSFETs

onsemi NxJS3151P Single P-Channel Power MOSFETs are high-performance MOSFETs designed for efficient switching applications. Housed in a compact SC-88 (SOT-363) 2mm x 2mm package, these onsemi MOSFETs offer a low RDS(on) of just 45mΩ at -4.5V, enabling reduced conduction losses and improved thermal performance. With a maximum drain current of -3.3A and a drain-source voltage rating of -12V, the NxJS3151P devices are well-suited for load switching in portable and battery-powered devices. The ultra-low gate charge and fast switching characteristics contribute to enhanced energy efficiency, making the onsemi NxJS3151P Single P-Channel Power MOSFETs ideal for space-constrained designs where power density and reliability are critical.