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NTJD4105CT1G

Name: onsemi NTJD4105CT1G
Brand: onsemi
SKU: 863-NTJD4105CT1G
Price: 0.43 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-NTJD4105CT1G

Mfr. No:

NTJD4105CT1G

Mfr.:

onsemi

Description:

MOSFETs 20V/-8V 0.63A/-.775A Complementary

Datasheet:

NTJD4105CT1G Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTJD4105CT1G

In Stock: 4.124

Stock:: 4.124

Can Dispatch Immediately

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On Order:: 12.000

Expected 1/8/2027
Factory Lead Time:: 43

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1 Maximum: 1150

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,439 €	0,44 €
	0,289 €	2,89 €
	0,182 €	18,20 €
	0,122 €	61,00 €
	0,108 €	108,00 €
Full Reel (Order in multiples of 3000)
	0,108 €	324,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

NTJD4105CT2G

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

0,42 €

Min:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-363-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V, 8 V
Id - Continuous Drain Current:	630 mA, 775 mA
Rds On - Drain-Source Resistance:	375 mOhms, 900 mOhms
Vgs - Gate-Source Voltage:	- 12 V, - 8 V, 8 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	600 mV, 450 mV
Qg - Gate Charge:	1.3 nC, 2.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	550 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Dual
Fall Time:	506 ns, 36 ns
Forward Transconductance - Min:	2 S, 2 S
Product Type:	MOSFETs
Rise Time:	227 ns, 23 ns
Series:	NTJD4105C
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	786 ns, 50 ns
Typical Turn-On Delay Time:	83 ns, 13 ns
Unit Weight:	7,500 mg

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Filter Document:

Datasheet

NTJD4105CT1G Datasheet

EOL

On Semiconductor - EOL 5-17-10 (PDF)

PCN

SPICE Models

Compliance Codes

TARIC:: 8541210000
CNHTS:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
KRHTS:: 8541219000
MXHTS:: 8541210100
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Taiwan

The country is subject to change at the time of shipment.

PowerTrench® MOSFETs

onsemi PowerTrench^® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low R_DS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.