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NTD360N80S3Z

Name: onsemi NTD360N80S3Z
Brand: onsemi
SKU: 863-NTD360N80S3Z
Price: 3.44 EUR
Availability: InStock

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Mouser No:

863-NTD360N80S3Z

Mfr. No:

NTD360N80S3Z

Mfr.:

onsemi

Description:

MOSFETs SF3 800V 360MOHM DPAK

Datasheet:

NTD360N80S3Z Datasheet

ECAD Model:

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More Information

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In Stock: 2.045

Stock:: 2.045 Can Dispatch Immediately

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Factory Lead Time:: 21 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,44 €	3,44 €
	2,03 €	20,30 €
	1,57 €	157,00 €
	1,41 €	705,00 €
	1,32 €	1.320,00 €
Full Reel (Order in multiples of 2500)
	1,32 €	3.300,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	13 A
Rds On - Drain-Source Resistance:	360 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.8 V
Qg - Gate Charge:	25.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Product Type:	MOSFETs
Series:	NTD360N80S3Z
Factory Pack Quantity:	2500
Subcategory:	Transistors
Unit Weight:	360 mg

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Datasheet

NTD360N80S3Z Datasheet

PCN

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

NTD360N80S3Z SUPERFET® III MOSFET

onsemi NTD360N80S3Z SUPERFET® III MOSFET is optimized for the primary switch of a flyback converter, enabling lower switching losses and case temperature. This MOSFET incorporates an internal Zener diode that improves the ESD capability. onsemi NTD360N80S3Z MOSFET features 800V drain-to-source voltage (V_DSS), 360mΩ maximum drain-to-source resistance R_DS(on), and 13A maximum drain current (I_D). Typical applications include adapters/chargers, LED lighting, AUX power, audio, and industrial power.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.