NTBG040N120SC1

onsemi
863-NTBG040N120SC1
NTBG040N120SC1

Mfr.:

Description:
SiC MOSFETs SIC MOS D2PAK-7L 40MOHM 1200V

Datasheet:
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Learn more about onsemi NTBG040N120SC1

In Stock: 967

Stock:
967 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 800)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
16,49 € 16,49 €
13,26 € 132,60 €
13,17 € 1.317,00 €
12,72 € 6.360,00 €
Full Reel (Order in multiples of 800)
12,72 € 10.176,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
REACH - SVHC:
SMD/SMT
D2PAK-7
N-Channel
1 Channel
1.2 kV
60 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
357 W
Enhancement
EliteSiC
Brand: onsemi
Configuration: Single
Fall Time: 9 ns
Forward Transconductance - Min: 20 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product Type: SiC MOSFETS
Rise Time: 20 ns
Series: NTBG040N120SC1
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: SiC
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 17 ns
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Korea, Republic of
The country is subject to change at the time of shipment.

M1 EliteSiC MOSFETs

onsemi M1 EliteSiC MOSFETs feature voltage ratings of 1200V and 1700V. The onsemi M1 MOSFETs are designed to meet the requirements of high-power applications that demand reliability and efficiency. The M1 EliteSiC MOSFETs are available in various package options, including D2PAK7, TO-247-3LD, TO-247-4LD, and bare die.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

1200V EliteSiC (Silicon Carbide) MOSFETs

onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs provide superior switching performance and high reliability compared to silicon. These MOSFETs offer low on-resistance that ensures low capacitance and gate charge. The 1200V EliteSiC MOSFETs provide system benefits, including high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size. These MOSFETs feature blocking voltage, high-speed switching, and low capacitance and operate at -55°C to +175°C temperature range. The 1200V SiC MOSFETs are AEC-Q101 automotive qualified and are RoHS compliant. These MOSFETs are suited for boost inverters, charging stations, DC-DC inverters, DC-DC converters, onboard chargers (OBCs), motor control, industrial power supplies, and server power supplies.

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