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NCP51705MNTXG

Name: onsemi NCP51705MNTXG
Brand: onsemi
SKU: 863-NCP51705MNTXG
Price: 3.55 EUR
Availability: InStock

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See Product Specifications

Mouser No:

863-NCP51705MNTXG

Mfr. No:

NCP51705MNTXG

Mfr.:

onsemi

Description:

Gate Drivers SIC MOSFET DRIVER

Datasheet:

NCP51705MNTXG Datasheet

ECAD Model:

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More Information

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In Stock: 11.603

Stock:: 11.603 Can Dispatch Immediately

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Factory Lead Time:: 17 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,55 €	3,55 €
	2,73 €	27,30 €
	2,52 €	63,00 €
	2,25 €	225,00 €
	2,05 €	512,50 €
	2,00 €	1.000,00 €
	1,92 €	1.920,00 €
Full Reel (Order in multiples of 3000)
	1,91 €	5.730,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Gate Drivers
RoHS:
Product:	MOSFET Gate Drivers
Type:	Low-Side
Mounting Style:	SMD/SMT
Package/Case:	QFN-24
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	6 A
Supply Voltage - Min:	10 V
Supply Voltage - Max:	22 V
Rise Time:	8 ns
Fall Time:	8 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	NCP51705
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Logic Type:	TTL
Maximum Turn-Off Delay Time:	50 ns
Maximum Turn-On Delay Time:	50 ns
Operating Supply Current:	12 mA
Pd - Power Dissipation:	2.9 W
Product Type:	Gate Drivers
Propagation Delay - Max:	50 ns
Shutdown:	Shutdown
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Technology:	Si

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Datasheet

NCP51705MNTXG Datasheet

PCN

CNHTS:: 8542399000
CAHTS:: 8542390000
USHTS:: 8542390090
JPHTS:: 8541290100
MXHTS:: 8542399999
ECCN:: EAR99

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

NCP51705 Gate Driver

onsemi NCP51705 Gate Driver is designed to primarily drive SiC MOSFET transistors. This gate driver achieves the lowest possible conduction losses, the driver is capable to deliver the maximum gate voltage to the SiC MOSFET device. The NCP51705 driver utilizes its onboard charge pump to generate a user selectable negative voltage rail. This gate driver provides an externally accessible 5V rail to power the secondary side of digital or high-speed opto-isolators. The NCP51705 driver offers protection functions such as under-voltage lockout monitoring and thermal shutdown based on the junction temperature of the driver circuit. Typical applications include driving SiC MOSFETs, industrial inverters, motor drivers, PFC, AC to DC, and DC to DC converters.