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FQD9N25TM-F080

Images are for reference only
See Product Specifications

Mouser No:

512-FQD9N25TM-F080

Mfr. No:

FQD9N25TM-F080

Mfr.:

onsemi

Lifecycle:

Obsolete

Datasheet:

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	7.4 A
Rds On - Drain-Source Resistance:	420 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	20 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2.5 W
Channel Mode:	Enhancement
Tradename:	QFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	45 ns
Forward Transconductance - Min:	6.8 S
Product Type:	MOSFETs
Rise Time:	105 ns
Series:	FQD9N25
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	13 ns
Part # Aliases:	FQD9N25TM_F080
Unit Weight:	330 mg