FGY120T65SPD

onsemi
863-FGY120T65SPD
FGY120T65SPD

Mfr.:

Description:
IGBTs FS3 IGBT 650V/120A AND STEALTH DIODE

Lifecycle:
NRND:
Not recommended for new designs.
ECAD Model:
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In Stock: 394

Stock:
394 Can Dispatch Immediately
Factory Lead Time:
23 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
7,36 € 7,36 €
5,03 € 50,30 €
3,69 € 442,80 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.5 V
20 V
240 A
882 W
- 55 C
+ 175 C
FGY120T65SPD
Tube
Brand: onsemi
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBTs
Factory Pack Quantity: 30
Subcategory: Transistors
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Attributes selected: 0

Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
Japan
The country is subject to change at the time of shipment.

AFGYx Field Stop Trench IGBTs

onsemi AFGYx Field Stop Trench IGBTs are AEC-Q101 qualified and feature very low conduction and switching losses. These features allow for a high-efficiency operation in various applications, rugged transient reliability, and low EMI.