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FGY120T65SPD

Name: onsemi FGY120T65SPD
Brand: onsemi
SKU: 863-FGY120T65SPD
Price: 6.61 EUR
Availability: InStock

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Mouser No:

863-FGY120T65SPD

Mfr. No:

FGY120T65SPD

Mfr.:

onsemi

Description:

IGBTs FS3 IGBT 650V/120A AND STEALTH DIODE

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FGY120T65SPD Datasheet

ECAD Model:

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More Information

Learn more about onsemi FGY120T65SPD

In Stock: 403

Stock:: 403 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,61 €	6,61 €
	4,52 €	45,20 €
	3,23 €	387,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.5 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	240 A
Pd - Power Dissipation:	882 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGY120T65SPD
Packaging:	Tube
Brand:	onsemi
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors

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Datasheet

FGY120T65SPD Datasheet

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

AFGYx Field Stop Trench IGBTs

onsemi AFGYx Field Stop Trench IGBTs are AEC-Q101 qualified and feature very low conduction and switching losses. These features allow for a high-efficiency operation in various applications, rugged transient reliability, and low EMI.