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FGHL50T65MQDTL4

Name: onsemi FGHL50T65MQDTL4
Brand: onsemi
SKU: 863-FGHL50T65MQDTL4
Price: 4.09 EUR
Availability: InStock

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Mouser No:

863-FGHL50T65MQDTL4

Mfr. No:

FGHL50T65MQDTL4

Mfr.:

onsemi

Description:

IGBTs FS4 MID SPEED IGBT 650V 50A TO247-4L WITH FULL RATED CURRENT DIODE

Datasheet:

FGHL50T65MQDTL4 Datasheet

ECAD Model:

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More Information

Learn more about onsemi FGHL50T65MQDTL4

In Stock: 321

Stock:: 321 Can Dispatch Immediately

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Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,09 €	4,09 €
	3,04 €	30,40 €
	2,57 €	308,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-4
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.45 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	268 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FGHL50T65MQDTL4
Packaging:	Tube
Brand:	onsemi
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs

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Datasheet

FGHL50T65MQDTL4 Datasheet

PCN

Material Composition Disclosure

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

FS4 IGBTs

onsemi FS4 IGBTs are a powerful and efficient solution for various industrial and automotive applications. The onsemi FS4 has a maximum junction temperature of 175°C. These IGBTs are built to withstand even the harshest operating conditions.

FGHL50T65MQDTx Field Stop Trench IGBTs

onsemi FGHL50T65MQDTx Field Stop Trench IGBTs are 4^th generation mid-speed IGBTs technology co-packed with a fully rated current diode. These IGBTs operate at 175°C maximum junction temperature. Features include high current capability, smooth and optimized switching, and tight parameter distribution. Typical applications include solar inverters, UPS, ESS, converters, and FPS.