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FFSH3065B

Name: onsemi FFSH3065B
Brand: onsemi
SKU: 863-FFSH3065B
Price: 5.19 EUR
Availability: InStock

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Mouser No:

863-FFSH3065B

Mfr. No:

FFSH3065B

Mfr.:

onsemi

Description:

SiC Schottky Diodes SIC DIODE 650V

Datasheet:

FFSH3065B Datasheet

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Learn more about onsemi FFSH3065B

In Stock: 628

Stock:: 628 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,19 €	5,19 €
	3,39 €	33,90 €
	2,94 €	352,80 €
	2,86 €	1.458,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-2
Configuration:	Single
If - Forward Current:	30 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.38 V
Ifsm - Forward Surge Current:	110 A
Ir - Reverse Current:	40 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSH3065B
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	268 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V
Unit Weight:	9,140 g

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Datasheet

FFSH3065B Datasheet

EOL

PCN

Material Composition Disclosure

Compliance Codes

CNHTS:: 8541100000
USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

FFSH SiC Schottky Diodes

onsemi FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of +175°C. These onsemi Schottky Diodes have no switching loss and a high surge current capacity. FFSH diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.