It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

FFSH1665ADN-F155

Name: onsemi FFSH1665ADN-F155
Brand: onsemi
SKU: 863-FFSH1665ADN-F155
Price: 6.73 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-FFSH1665ADN-F155

Mfr. No:

FFSH1665ADN-F155

Mfr.:

onsemi

Description:

SiC Schottky Diodes 650V 16A SIC SBD

Datasheet:

FFSH1665ADN-F155 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi FFSH1665ADN-F155

In Stock: 433

Stock:: 433 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 13 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 433 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,73 €	6,73 €
	4,53 €	45,30 €
	3,45 €	345,00 €
	3,29 €	1.480,50 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC Schottky Diodes
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Configuration:	Dual Anode Common Cathode
If - Forward Current:	16 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	49 A
Ir - Reverse Current:	200 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	FFSH1665ADN-F155
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	77 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	450
Subcategory:	Diodes & Rectifiers
Tradename:	EliteSiC
Vr - Reverse Voltage:	650 V

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FFSH1665ADN-F155 Datasheet

PCN

Material Composition Declaration

CNHTS:: 8541590000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
MXHTS:: 8541100101
ECCN:: EAR99

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.