FFSB0865B

onsemi
863-FFSB0865B
FFSB0865B

Mfr.:

Description:
SiC Schottky Diodes 650V 8A SIC SBD GEN1.5

ECAD Model:
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In Stock: 456

Stock:
456 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,81 € 2,81 €
1,83 € 18,30 €
1,27 € 127,00 €
1,14 € 570,00 €
Full Reel (Order in multiples of 800)
1,02 € 816,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC Schottky Diodes
RoHS:  
REACH - SVHC:
SMD/SMT
D2PAK-2
Single
8 A
650 V
1.39 V
56 A
500 nA
- 55 C
+ 175 C
FFSB0865B
Reel
Cut Tape
Brand: onsemi
Country of Assembly: CN
Country of Diffusion: KR
Country of Origin: CN
Pd - Power Dissipation: 73 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 800
Subcategory: Diodes & Rectifiers
Tradename: EliteSiC
Vr - Reverse Voltage: 650 V
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Attributes selected: 0

CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.