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FDZ375P

Name: onsemi FDZ375P
Brand: onsemi
SKU: 512-FDZ375P
Price: 3.66 EUR
Availability: InStock

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See Product Specifications

Mouser No:

512-FDZ375P

Mfr. No:

FDZ375P

Mfr.:

onsemi

Description:

MOSFETs 20V P-Channel 1.5V Specfied PowerTrench

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

FDZ375P Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 869

Stock:: 869 Can Dispatch Immediately

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,66 €	3,66 €
	2,38 €	23,80 €
	1,87 €	187,00 €
	1,49 €	745,00 €
Full Reel (Order in multiples of 5000)
	1,26 €	6.300,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WLCSP-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3.7 A
Rds On - Drain-Source Resistance:	143 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	15 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.7 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Forward Transconductance - Min:	11 S
Product Type:	MOSFETs
Series:	FDZ375P
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Unit Weight:	68,400 mg

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Filter Document:

Datasheet

FDZ375P Datasheet (PDF)

EOL

Product Discontinuance Notification (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541210000
USHTS:: 8541290065
JPHTS:: 8541210101
KRHTS:: 8541219000
MXHTS:: 85412999
ECCN:: EAR99

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and R_DS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low R_DS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low R_DS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering