FDP2D9N12C

863-FDP2D9N12C
FDP2D9N12C

Mfr.:

Description:
MOSFETs PTNG 120V N-FET

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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More Information
Learn more about onsemi FDP2D9N12C

In Stock: 402

Stock:
402 Can Dispatch Immediately
Quantities greater than 402 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,41 € 6,41 €
4,52 € 45,20 €
3,77 € 377,00 €
3,36 € 1.680,00 €
3,14 € 2.512,00 €

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
120 V
210 A
2.95 mOhms
- 20 V, 20 V
4 V
98 nC
- 55 C
+ 150 C
179 W
Enhancement
Tube
Brand: onsemi
Configuration: Single
Fall Time: 24 ns
Forward Transconductance - Min: 215
Product Type: MOSFETs
Rise Time: 31 ns
Series: FDP2D9N12C
Factory Pack Quantity: 800
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 72 ns
Typical Turn-On Delay Time: 43 ns
Unit Weight: 2 g
Products found:
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Attributes selected: 0

Datasheet

EOL

PCN

Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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