FDMS7620S

onsemi
512-FDMS7620S
FDMS7620S

Mfr.:

Description:
MOSFETs 30V Dual N-Channel PowerTrench MOSFET

ECAD Model:
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In Stock: 3.627

Stock:
3.627 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
1,75 € 1,75 €
1,12 € 11,20 €
0,753 € 75,30 €
0,599 € 299,50 €
0,553 € 553,00 €
Full Reel (Order in multiples of 3000)
0,526 € 1.578,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
Power-56-8
N-Channel
2 Channel
30 V
10.1 A, 12.4 A
20 mOhms, 11.2 mOhms
- 20 V, 20 V
1 V
11 nC, 23 nC
- 55 C
+ 150 C
2.2 W
Enhancement
PowerTrench
Reel
Cut Tape
MouseReel
Brand: onsemi
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TH
Fall Time: 1.4 ns, 1.5 ns
Forward Transconductance - Min: 22 S, 53 S
Product Type: MOSFETs
Rise Time: 1.2 ns, 1.8 ns
Series: FDMS7620S
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 11.9 nS, 17.4 nS
Typical Turn-On Delay Time: 5.2 nS, 6.6 nS
Unit Weight: 211 mg
Products found:
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Attributes selected: 0

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
ECCN:
EAR99

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and RDS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low RDS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More


ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low RDS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering

FDMS36xxS Power Stage Dual Asymmetric MOSFETs

onsemi FDMS36xxS Power Stage Dual Asymmetric MOSFET modules provide a high output current capability in a 5mm x 6mm dual MOSFET solution. These modules incorporate control and synchronous MOSFET as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to allow easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET are designed to deliver optimal power efficiency for output currents up to 30A. These onsemi devices are optimized to minimize the combination of conduction and switching losses from 300kHz to 600kHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.

PowerTrench® MOSFETs

onsemi PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  

Fairchild Power Trench™ MOSFETs

Fairchild's PowerTrench® MOSFETs are optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. These PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing Fairchild's advanced technology, the FOM (figure of merit) of these devices is 66 percent lower than that of the previous generation. The soft body diode performance of these PowerTrench® MOSFETs are able to eliminate snubber circuit or replace higher voltage rating - MOSFETs that need this circuit because it can minimize the undesirable voltage spikes in synchronous rectification. These Fairchild PowerTrench® MOSFETs provide designers the opportunity to significantly increase system efficiency and power density in synchronous rectification applications.
Learn More